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| SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: * * * * * Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: * SMPS, snubber, secondary side rectification A C Chip Type SIDC24D30SIC3 VBR 300V IF 10A Die Size 1.706 x 1.38 mm2 Package sawn on foil Ordering Code Q67050-A4163A103 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.706x 1.38 mm 1.405 x 1.08 2.354 / 1.548 355 75 0 1649 pcs Photoimide 3200 nm Al 1400 nm Ni Ag -system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, 350m 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C mm m mm deg 2 Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 SIDC24D30SIC3 Maximum Ratings Parameter Repetitive peak reverse voltage Surge peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM V RSM IF I FSM I FRM I FMAX Tj , Ts t g Condition Value 300 300 10 Unit V TC =25 C, tP =10 ms sinusoidal TC = 100 C, T j = 1 5 0 C, D=0.1 TC =25 C, tp=10s 36 45 100 -55...+175 A Maximum repetitive forward current limited by Tjmax Non repetitive peak forward current Operating junction and storage temperature C Static Electrical Characteristics (tested on chip), Tj=25 C, unless otherwise specified Parameter Reverse leakage current Forward voltage drop Symbol IR VF V R =300V I F= 1 0 A Conditions Tj= 2 5 C Tj= 2 5 C Value min. Typ. 15 1.5 max. 200 1.7 Unit A V Dynamic Electrical Characteristics, at Tj = 25 C, unless otherwise specified, tested at component Parameter Total capacitive charge Symbol QC I F =10A di/dt=200A/s V R =200V I F =10A di/dt=200A/s VR = 2 0 0 V Conditions Value min. Typ. 23 max. Unit Tj = 150 C nC Switching time t rr Tj = 150 C n.a. ns Total capacitance C I F =10A di/dt=200A/s T j =25C f=1MHz V R = 1V V R =150V V R =300V 600 55 40 pF Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 SIDC24D30SIC3 CHIP DRAWING: 1705 1380 1405 Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 1080 40 R1 SIDC24D30SIC3 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES SDP10S30 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 |
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